mist CVD for β-Ga2O3 MESFETs

Takane-kun (D2) published an article in Applied Physics Express! This is a collaborative work with Nagoya-U. & Panasonic. Congrats, Takane-kun!

Mist CVD was applied to grow the β-Ga₂O₃ channel layer of a metal-semiconductor field-effect transistor on a semi-insulating β-Ga₂O₃ (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm² V^–1 s^–1 and 6.2×10¹⁷ cm⁻³, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm⁻¹. The maximum transconductance was 46 mS mm⁻¹ and the on resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. / ミスト CVD を適用して、半絶縁性 β-Ga₂O₃ (010) 基板上に金属半導体電界効果トランジスタの β-Ga₂O₃ チャネル層を成長させました。 チャネル層の移動度とキャリア濃度は、それぞれ80 cm² V^-1 s^-1と6.2×10¹⁷ cm^-3でした。 このデバイスは、しきい値ゲート電圧が-9 Vのピンチオフ特性を示し、最大ドレイン電流は240 mA mm^-1でした。 最大相互コンダクタンスは46 mS mm^-1、オン抵抗は30 Ω mmでした。 このデバイス性能は、ミスト CVD が将来的に低コストのデバイスを提供できる潜在的な成長技術であることを示唆しています。

Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates, Hitoshi Takane¹, Yuji Ando², Hidemasa Takahashi², Ryutaro Makisako³, Hikaru Ikeda⁴, Tetsuzo Ueda⁵, Jun SUDA³, Katsuhisa Tanaka⁶, Shizuo Fujita⁴ and Hidetaka Sugaya⁷ Accepted Manuscript online 11 August 2023 DOI 10.35848/1882-0786/acefa5 ¹ Department of Material Chemistry, Kyoto University, Kyoto, Kyoto, JAPAN ² Department of Electronics, Nagoya University, Nagoya, Aichi, JAPAN ³ Department of Electronics, Nagoya University, Nagoya, JAPAN ⁴ Office of Society Academia Collaboration for Innovation, Kyoto University, Kyoto, JAPAN ⁵ Panasonic Corporation Industry Company, Kadoma, Osaka, JAPAN ⁶ Department of Material Chemistry, Kyoto University, Kyoto, JAPAN ⁷ Panasonic Corporation, Minato-ku, Tokyo, JAPAN