IWGO2022

The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022) (Oct. 23 – 27, 2022 at THE SAIHOKUKAN HOTEL, Nagano) にて若松君（M2）、高根君（D1）が発表します

Pos 1-23 (Poster) 17:30- 19:00 Influence of synthesis conditions on growth of α-Ga2O3 film in Mist-CVD process Takeru Wakamastu,*,1 Hitoshi Takane,1 Kentaro Kaneko,1 Tsutomu Araki,2 and Katsuhisa Tanaka1 1Kyoto University, Japan, 2Ritsumeikan University, Japan

Pos 2-11 (Poster) 17:30- 19:00 Effect of dislocation and impurity on electrical properties of Si-doped α-Ga2O3 on sapphire substrate Hitoshi Takane,*,1 Hirokazu Izumi,2 Hajime Hojo,3 Takeru Wakamatsu,1 Katsuhisa Tanaka,1 and Kentaro Kaneko1 1Kyoto University, Japan, 2Hyogo Prefectural Institute of Technology, Japan, 3Kyushu University, Japan

Plenary 1 Progress of α-Ga2O3 for actual device applications Shizuo Fujita,*,1 Kantaro Kaneko,1,2 and Katsuhisa Tanaka1 1Kyoto University, Japan, 2Ritsumeikan University, Japan

Pos 1-25 (Poster) Growth of Ga2O3 film on ScAlMgO4 substrate by mist-CVD 17:30- 19:00 Syuhei Yamashita,*,1 Hitoshi Takane,2 Yuichi Wada,1 Yuto Yamafuji,1 Junjiro Kikawa,1 Makoto Matsukura,3 Takahiro Kojima,3 Takashi Shinohe,4 Kentaro Kaneko,2 and Tsutomu Araki1 1Ritsumeikan University, Japan, 2Kyoto University , Japan, 3OXIDE, Japan, 4FLOSFIA, Japan